1 features ? ezbright power chip led rf performance C 450 & 460 nm - 200 mw min. C 527 nm - 60 mw min. ? lambertian radiation ? conductive epoxy, solder paste or preforms, or flux eutectic attach ? low forward voltage C 3.5 v typical at 350 ma ? single wire bond structure ? maximum dc forward current - 400 ma ? dielectric passivation across epi surface applications ? general illumination C automobile C aircraft C decorative lighting C task lighting C outdoor illumination ? white leds ? crosswalk signals ? backlighting cree ? ez600? gen ii led data sheet c xxx ez600-s xx 000-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez600-sxx000-2 chip diagram top view bottom view ezbright led chip 580 x 580 m 2 t = 170 m backside metallization gold bond pad 130 x 130 m 2 die cross section anode (+); 3 m ausn cathode (-) d a t a s h e e t : c p r 3 e e r e v a dielectric passivation subject to change without notice. www.cree.com
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez600 are trademarks of cree, inc. 2 cpr3ee rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c note 1 c xxx ez600-s xx 000-2 dc forward current 400 ma peak forward current 600 ma note 3 led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +120c typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez600-s xx 00-2 3.1 3.5 4.1 2 20 c460ez600-s xx 00-2 3.1 3.5 4.1 2 21 c527ez600-sxx00-2 3.1 3.5 4.1 2 35 mechanical specifcations c xxx ez600-s xx 000-2 description dimension tolerance p-n junction area (m) 550 x 550 40 chip area (m) 580 x 580 40 chip thickness (m) 170 25 top au bond pad (m) 130 x 130 15 au bond pad thickness (m) 3.0 1.0 back contact metal area (m) 580 x 580 40 back contact metal thickness (m) 3.0 1.0 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. 3. this peak forward current specifcation is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65c. 4. specifcations are subject to change without notice.
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez600 are trademarks of cree, inc. 3 cpr3ee rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez600-s xx 000-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez600-s xx 000-2) orders may be flled with any or all bins (c xxx ez600-0 xxx-2 ) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez600-s20000-2 c450ez600-0209-2 c450ez600-0210-2 c450ez600-0211-2 c450ez600-0212-2 c450ez600-0205-2 c450ez600-0206-2 c450ez600-0207-2 c450ez600-0208-2 c450ez600-0201-2 C450EZ600-0202-2 c450ez600-0203-2 c450ez600-0204-2 280 240 200 dominant wavelength (nm) radiant flux (mw) 447.5 450 452.5 445 455 c460ez600-s20000-2 c460ez600-0209-2 c460ez600-0210-2 c460ez600-0211-2 c460ez600-0212-2 c460ez600-0205-2 c460ez600-0206-2 c460ez600-0207-2 c460ez600-0208-2 c460ez600-0201-2 c460ez600-0202-2 c460ez600-0203-2 c460ez600-0204-2 280 240 200 dominant wavelength (nm) radiant flux (mw) 457.5 460 462.5 455 465 c527ez600-s06000-2 c527ez600-0017-2 c527ez600-0018-2 c527ez600-0019-2 c527ez600-0014-2 c527ez600-0015-2 c527ez600-0016-2 c527ez600-0011-2 c527ez600-0012-2 c527ez600-0013-2 c527ez600-0008-2 c527ez600-0009-2 c527ez600-0010-2 c527ez600-0005-2 c527ez600-0006-2 c527ez600-0007-2 520 525 530 535 140 120 100 80 60 dominant wavelength (nm) radiant flux (mw)
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez600 are trademarks of cree, inc. 4 cpr3ee rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ez600 led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0% 25% 50% 75% 100% 125% 0 50 100 150 200 250 300 350 400 relative intensity if (ma) relative intensity vs. forward current - 8 - 4 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 dw shift (nm) if (ma) wavelength shift vs. forward current 0% 25% 50% 75% 100% 125% 0 50 100 150 200 250 300 350 400 relative intensity if (ma) relative intensity vs. forward current - 8 - 4 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 dw shift (nm) if (ma) wavelength shift vs. forward current 0 50 100 150 200 250 300 350 400 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative light intensity junction temperature ( c) relative light intensity vs junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dominant wavelength shift (nm) junction temperature ( c) dominant wavelength shift vs junction temperature - 0.600 - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 0.100 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs junction temperature
copyright ? 2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez600 are trademarks of cree, inc. 5 cpr3ee rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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